TPCC8137 mosfet equivalent, silicon p-channel mosfet.
(1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 8.0 mΩ (typ.) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (4) Enhancem.
* Power Management Switches
2. Features
(1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 8.0 mΩ.
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